Pulsd laser deposition of thin films chrisey and hubler pdf writer
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Pulsd laser deposition of thin films chrisey and hubler pdf printer
Ge-Sb-Te thin films were obtained by ns-, ps-, and fs-pulsed laser deposition PLD in various experimental conditions. The thickness of the samples was influenced by the Nd-YAG laser wavelength, fluence, target-to-substrate distance, and deposition time. The topography and chemical analysis results showed that the films deposited by ns-PLD revealed droplets on the surface together with a decreased Te concentration and Sb over-stoichiometry. Thin films with improved surface roughness and chemical compositions close to nominal values were deposited by ps- and fs-PLD. The X-ray diffraction and Raman spectroscopy results showed that the samples obtained with ns pulses were partially crystallized while the lower fluences used in ps- and fs-PLD led to amorphous depositions. The optical parameters of the ns-PLD samples were correlated to their structural properties. Phase change PC memories are based on changes in optical properties and electrical conductivity of chalcogenide materials upon a rapid amorphous-to-crystalline phase transition and vice versa.
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Outline 1. Thin film deposition 2. Basic Theory of PLD 4. Thin Film Deposition Transfer atoms from a target to a vapor or plasma to a substrate. Want sufficient diffusion for atoms to find best sites.
Advanced Pulsed Laser Deposition PLD processes allow the growth of oxide thin film heterostructures on large area substrates up to 4-inch diameter, with flexible and controlled doping, low dislocation density, and abrupt interfaces. Regarding the homogeneity on large area of structure and electrical properties, flexibility of doping, and state-of-the-art electronic and optical performance, the comparably simple PLD processes are now advantageous or at least fully competitive to Metal Organic Chemical Vapor Deposition or Molecular Beam Epitaxy. In particular, the high flexibility connected with high film quality makes PLD a more and more widespread growth technique in oxide research. Pulsed Laser Deposition PLD is a relatively new exploratory growth technique especially suitable for oxide thin films and heterostructures [ 1 , 2 ]. The principle of PLD is the use of a small single source target with diameter of about one inch, which may be a single- or a multicomponent compound material [ 5 ]. An ns-pulse high-power laser with wavelength in the UV ablates material from the target and excites it into a plasma state. Well-established advantages of PLD are the unique flexibility concerning the deposited film material, the high growth rate, and a high structural quality of the films.
Pulsed laser deposition of hydroxyapatite thin films. Koch, C. Pulsed Laser Deposition : passive and active waveguides.
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The electron temperature of the plasma formed during pulsed laser deposition of Bi-Sr-Ca-Cu-O target was measured using Langmuir probe. The obtained values of electron temperature were in the range of 1. Presented results are discussed from the point of view of different theories of plasma splitting.
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