Semiconductor and electronic devices adir bar lev pdf
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- US20090109755A1 - Neighbor block refresh for non-volatile memory - Google Patents
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- Semiconductors and electronic devices
- Semiconductor and electronic devices
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Effective date : Two or more erase sectors blocks in a given physical sector of the array. When after erasing a target block, determining whether a neighbor block needs to be refreshed by checking a sub-population of Vt distributions at a given program level. Various timings and strategies for performing the refresh operation are disclosed. The effects of word line disturb gate disturb may thereby be reduced.
US20090109755A1 - Neighbor block refresh for non-volatile memory - Google Patents
This application claims priority from U. Provisional Patent Application No. The disclosure relates to semiconductor devices and, more particularly, to techniques for implementing and operating non-volatile memory NVM , such as floating gate FG devices or charge-trapping devices such as nitride read only memory NROM devices, or other microelectronic cells or structures. Memory arrays are well known, and comprise a plurality many, including many millions of memory cells organized including physically arranged in rows usually represented in drawings as going across the page, horizontally, from left-to-right and columns usually represented in drawings as going up and down the page, from top-to-bottom. A plurality of bitlines, labeled BL a through BL f , may extend in parallel with one another, vertically through the array or a portion thereof.
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Influence of pH Preparation on the Photo-Response. Bar-Lev s Home Page. Adir Bar-Lev. Vogel, , Music, pages. Through interviews with many of the leading lyricists, aided.
A buried contact etch stop layer CESL is disposed between adjacent diffusions in a semiconductor device, such as between bitlines in a memory array. The CESL may be self-aligned to the diffusions, and may prevent misaligned bitline BL contacts from contacting silicon outside of the corresponding bitlines. The bitline contacts may have sufficient overlap of the bitlines to ensure full coverage by the bitlines. The CESL may comprise nitride or any other material that is harder more resistant to etch than the material on top of it. Provisional Application No. The disclosure relates to techniques for fabricating semiconductor devices and, more particularly, to forming arrays of non-volatile memory NVM cells. The transistor is a solid state semiconductor device which can be used for amplification, switching, voltage stabilization, signal modulation and many other functions.
Semiconductors and electronic devices
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Semiconductor and electronic devices
Published by Prentice Hall From: Anybook Ltd. Lincoln, United Kingdom. Seller Rating:. About this Item: Prentice Hall, Condition: Fair.
Semiconductor and electronic devices by Adir Bar-Lev, , Prentice-Hall edition, in English - 3rd ed.